2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features

The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an …

View 2N3055 datasheet for technical specifications, dimensions and more at DigiKey.

2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various electronic circuits. It is an NPN (negative-positive-negative) transistor with a maximum collector …

The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity …

The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications.

Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 2. Active Region Safe Operating Area. There are two …

Mar 21, 2024 · 2N3055 is an NPN transistor commonly used in general applications like audio power amplifiers and as a series pass transistor in linear power supplies. It is one of the first multi-amp …

Nov 5, 2018 · 2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose …

The 2N3055 is a classic NPN power bipolar junction transistor widely used in linear and switching applications. Built in a TO3 metal package, it offers high durability and effective heat dissipation, …