Abstract: In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled ...

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Abstract: This work investigates the proton irradiation effect on a kV-class vertical GaN-on-GaN PiN diode under 10-MeV and 50-MeV proton irradiation with fluence up to $1\times 10^{{14}}$ cm−2. After ...