Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Abstract: This paper presents a novel, efficient, and computationally lightweight approach for voltage and reactive power control in distribution networks with high penetration of distributed ...
Ayyoun is a staff writer who loves all things gaming and tech. His journey into the realm of gaming began with a PlayStation 1 but he chose PC as his platform of choice. With over 6 years of ...
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