Abstract: This study introduces a breakthrough achievement of 0.1-Gb/mm2 wing-shaped high-density embedded 3-D via resistive random access memory (Via RRAM) in TSMC’s 16-nm FinFET CMOS logic process.
Troy Segal is an editor and writer. She has 20+ years of experience covering personal finance, wealth management, and business news. David Kindness is a Certified Public Accountant (CPA) and an expert ...
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