IEEE

Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

Abstract: Low damage atomic layer etching (ALE) gate recess is developed for fabrication of millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced bombardments to the ...
IEEE

History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond

Abstract: In the early 1990s, gallium nitride (GaN) was deemed an excellent, next generation, semiconductor material for high power/high frequency transistors based on the material parameters of ...
GitHub

TTS-GAN: A Transformer-based Time-Series Generative Adversarial Network

Abstract: Time-series datasets used in machine learning applications often are small in size, making the training of deep neural network architectures ineffective. For time series, the suite of data ...
GitHub

GitHub - kaonashi-tyc/zi2zi: Learning Chinese Character style with conditional GAN

Learning eastern asian language typefaces with GAN. zi2zi(字到字, meaning from character to character) is an application and extension of the recent popular pix2pix model to Chinese characters. Details ...