Abstract: FinFET technology is a major leap from the traditional MOSFET and hence can really be a game changer for the electronic devices in terms of high performance and low power operation and the ...
Abstract: The effects of proton-induced multiple-cell upsets (MCUs) on 16 and 12-nm fin field effect transistor (FinFET) static random access memories (SRAMs) were studied. Their dependence on the ...