Abstract: In this study, we evaluate parasitic capacitance between the node contact (NC) and the bit-line (BL) in advanced dynamic random-access memory (DRAM) devices. Process modeling was used to ...
Abstract: In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and nanosheet are ...
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